Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm

Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by mschuster91 on Tuesday June 23, 2026 @03:32PM (#48650148)

> By stacking multiple nanosheet channels, the effective channel width can be maintained even within a highly compact footprint.

The fact that this level of precision can be achieved on 300mm wafers over many dozens of separate steps in separate devices is an insane achievement on its own.

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Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by amelius on Tuesday June 23, 2026 @05:37PM (#48651814)

A much greater achievement than training frontier models, or building any kind of software stack, if you ask me.

Yet everybody seems to think the moat is with the AI companies or nvidia.

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Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by y1n0 on Wednesday June 24, 2026 @12:20AM (#48655077)

Now that it's been clear there's money to be made for a little while, inference engines will be commoditized the same way as bitcoin miners.

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Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by blenklo on Wednesday June 24, 2026 @05:27AM (#48657297)

For sure but a weird comparision. These are completly different technologies.

I don't think a optics engineere can train a frontier model.

But also a frontier model requires a lot of compute.

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Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by ksec on Wednesday June 24, 2026 @08:52AM (#48658972)

And the money we are paying for it as consumer is ridiculously low. And yet all we have ever heard was they are being ripped off.

Generally speaking both HN and the internet rarely appreciate hardware advancement.

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