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A comment on Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm. Parent comment

Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by blenklo on Wednesday June 24, 2026 @05:27AM (#48657297)
For sure but a weird comparision. These are completly different technologies.

I don't think a optics engineere can train a frontier model.

But also a frontier model requires a lot of compute.

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