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Re:What's Different About Next-Gen Transistors by variadix on Friday October 21, 2022 @03:02PM (#33291818)
It’s built from the bottom up in layers (at least traditionally, I’m not sure how the newer 3D structures for memory are constructed). The bottom layer of silicon substrate is covered in an oxide and etched selectively by photoresist and masking. Further layers are connective layers of metal lines insulated by oxide, with vias connecting metal layers to one another. The same oxide deposition, photoresist, expose, etch process is used for each layer.
Re:What's Different About Next-Gen Transistors by mattbillenstein on Friday October 21, 2022 @03:26PM (#33292069)
Haven't worked in the space in more than 15 years, but as I recall there were dozens of masks - maybe upwards of 50 - when I was doing ASIC.

And I believe there were steps to flatten and I believe effectively sand the surface flat after some layers.

Re:What's Different About Next-Gen Transistors by JumpCrisscross on Friday October 21, 2022 @03:44PM (#33292256)
> oxide deposition, photoresist, expose, etch process is used for each layer

Would note that since FinFETs, deposition occurs from the side as well as top.