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A comment on Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm. Parent comment

Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by marcosdumay on Wednesday June 24, 2026 @12:03AM (#48654952)
> The shorter connections could lead to faster rise times though, right?

Not if you replace that length with more capacitors stacked on top of each other.

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Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by saltcured on Wednesday June 24, 2026 @11:52AM (#48661748)
Hah, yeah.

I've been naively assuming they are now making high quality vias, so that circuit characteristics would be similar in either vertical or horizontal direction.

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