Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee...
by saltcured on Wednesday June 24, 2026 @11:52AM
(#48661748)
Hah, yeah.
I've been naively assuming they are now making high quality vias, so that circuit characteristics would be similar in either vertical or horizontal direction.
I've been naively assuming they are now making high quality vias, so that circuit characteristics would be similar in either vertical or horizontal direction.