Re:Micron Introduces 128 GB DDR5-8000 RDIMMs with Monolithic...
by wtallis on Monday November 13, 2023 @12:19PM
(#38252613)
Additionally, on-die ECC isn't unique to DDR5; it's a necessity for any DRAM built on the most recent high-density fab processes. It was used for at least some LPDDR4 memories, and probably most or all LPDDR5.
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Re:Micron Introduces 128 GB DDR5-8000 RDIMMs with Monolithic...
by jakobson14 on Monday November 13, 2023 @03:23PM
(#38254887)
Can't wait to see another round of rowhammer papers trashing these things. XD
Re:Micron Introduces 128 GB DDR5-8000 RDIMMs with Monolithic...
by dazed_confused on Monday November 13, 2023 @09:28PM
(#38258218)
Row and col lines are so close nowadays; you are fighting physics... Older processes didn't have this problem due to row isolation.
Re:Micron Introduces 128 GB DDR5-8000 RDIMMs with Monolithic...
by jakobson14 on Tuesday November 14, 2023 @02:17PM
(#38268102)
It's not the selection lines, up on higher metal layers. It's the actual memory cells themselves being too close together on the substrate.