AMD Demonstrates Stacked 3D V-Cache Technology: 192 MB at 2 TB/SEC

Re:AMD Demonstrates Stacked 3D V-Cache Technology: 192 MB at... by bcrl on Tuesday June 01, 2021 @01:02PM (#27357729)

Actually, this is where 3d stacking changes the game. With 1 additional vertical layer, you can get double the memory at practically the same latency, as the source of latency is related to the wire distance (and capacitance) in the 2d plane. Latency can be lowered with 3d stacking as well if you reduce the 2d area of the memory array. This is how the industry will keep scaling going when 2d feature sizes can no longer be shrunk.

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Re:AMD Demonstrates Stacked 3D V-Cache Technology: 192 MB at... by davuinci on Tuesday June 01, 2021 @02:10PM (#27358821)

What's the limitation on adding additional vertical layers though? One apparent limitation could be that by adding several vertical layers it would require the wire to be longer.

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Re:AMD Demonstrates Stacked 3D V-Cache Technology: 192 MB at... by klodolph on Tuesday June 01, 2021 @02:15PM (#27358905)

Heat dissipation, although the power consumption of SRAM is mostly affected by I/O rather than capacity.

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Re:AMD Demonstrates Stacked 3D V-Cache Technology: 192 MB at... by cogman10 on Wednesday June 09, 2021 @11:01AM (#27448700)

2 limitations.

1. Heat doesn't go away with layers and gets harder to cool. 2. These are still layers. You want each layer to be as flat as possible. As the layers deform you lose the ability to cleanly add more layers.

Current lithography is very much based on the notion that everything is flat.

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