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A comment on Using voltage glitching to unleash the A100 in my mining card. Parent comment

Re:Using voltage glitching to unleash the A100 in my mining ... by octoberfranklin on Wednesday November 11, 2026 @01:22PM (#50456659)
Binned for compute failures, not memory failures.

That's why this works. The yield on those HBM stacks is excellent. The binned cards had failures in the logic die, and hyperscalers want uniformity in their clusters. That's why the mining market took the downbinned cards.

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Re:Using voltage glitching to unleash the A100 in my mining ... by londons_explore on Wednesday November 11, 2026 @04:30PM (#50458978)
Do you not test the logic die before mounting the memory on top?
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Re:Using voltage glitching to unleash the A100 in my mining ... by monster_truck on Wednesday November 11, 2026 @08:05PM (#50461571)
back then, no
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Re:Using voltage glitching to unleash the A100 in my mining ... by octoberfranklin on Wednesday November 11, 2026 @11:53PM (#50463202)
Some testing can be done with a wafer probe, but other tests require stressing the die -- high current, heat output -- so it has to be in-package to do those tests.

Mounting the HBM on the interposer has to happen before putting the interposer in the package.

So it's the "must be in-package" yield tests that drive this.

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