Re:Samsung Announces 'Shinebolt' HBM3E Memory: HBM Hits 36GB...
by namibj on Thursday October 26, 2023 @07:58AM
(#38024400)
Two recent (weeks) papers/presentations on:
doing just that (LUT at the row buffer) https://youtu.be/9t1FJQ6nNw4;
doing parallel sense in NAND for computing AND between rows (which they call pages, but in DRAM they're called rows. It's the same concept, though.) https://youtu.be/QWL2Rw_VhHg
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