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Re:Samsung Announces 'Shinebolt' HBM3E Memory: HBM Hits 36GB... by namibj on Thursday October 26, 2023 @07:58AM (#38024400)
Two recent (weeks) papers/presentations on: doing just that (LUT at the row buffer) https://youtu.be/9t1FJQ6nNw4; doing parallel sense in NAND for computing AND between rows (which they call pages, but in DRAM they're called rows. It's the same concept, though.) https://youtu.be/QWL2Rw_VhHg

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