Those times referred to the speed of the actual ICs on the PCB. A “60 ns” SRAM IC takes up to 60 nanoseconds from the (input) address lines going stable to the (output) data lines going stable. If you sampled the data bus during those 60 nanoseconds, you might get incomplete data. Swapping for 50 ns modules means the ICs were verified to take less time for the data bus to be valid.

It’s a bit like overclocking your memory nowadays. Basically, the 50 and 60 nanosecond parts might be the same silicon, but the 50 ns ones were validated to perform at that speed. Today, a 3200 MT/s DDR4 module doesn’t mean it won’t run at 3600 MT/s; just that it was only verified to run at the former.

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The big difference between the two memory formats, however, is that DDR is pipelined. In the old days, you would present an address on the bus, hold it, and then wait for the data to come back. Only after sampling the data could you request a new address. DDR, being pipelined, allows you to request an address, and, before the data comes back, request a new address. After a while, the data from the first address would come back, followed by the data from the second.

That alone makes apples-to-apples comparisons hard.

With original DRAM you had the row strobe, the column strobe and then you could read out your data. You then had to precharge the row again before doing another access. Page mode DRAM improved on this by allowing you to keep the row open and read multiple columns, but you had to wait until the read completed before presenting the next column address. Enhanced-data-out (EDO) DRAM extends this by allowing you to pipeline accesses with the row.

So the ability to pipeline is much older than DDR. DDR SDRAM is an evolution on SDRAM, which is the first variety of DRAM that is actually clocked (and came after EDO); and the main innovation is transfer on both edges of the clock (falling as well as rising) - hence double-data-rate.

Ah, thank you for that! So you could fetch 1/(60ns) bytes per second synchronously, then (assuming the CPU could run in a loop that tightly)?

No; because after the read, you need to precharge the row again (due to the design of dynamic RAM).

ref. https://en.wikipedia.org/wiki/Dynamic_random-access_memory#M...

The quoted "50 ns" DRAM has a read-cycle time of 84 ns.

Oh, interesting. I’ll read up more on that.