Re:Comparing DDR5 Memory from Micron, Samsung, SK Hynix
by bcrl on Tuesday February 15, 2022 @04:34PM
(#30353081)
Again, going back to the discussions over on RWT: some of the less robust forms of ECC that DRAM manufacturers typically implement can end up amplifying the problem by turning double bit flips into silent multi bit flips which makes the memory controller's job much harder. DRAM manufacturing process tech is not optimized for logic like CPUs are, and those limitations really do constrain how much logic (or "how good") the ECC implemented on DRAM chips is. I trust CPU manufacturers to get memory controllers right more than I trust DRAM manufactures to get ECC right for one simple reason: row hammer.
Re:Comparing DDR5 Memory from Micron, Samsung, SK Hynix
by temac on Tuesday February 15, 2022 @06:33PM
(#30354432)
The on-die ECC for DDR5 is typically:
* mandatory (an hypothetical DDR5 without could have error rates so high it would basically not work)
* an implementation detail (if the raw error rate was not that high, there would be no on-die ECC)
* not reported to the CPU
It's a complete different beast than real ECC. It's not that it is bad or concerning, it is that it does not provide RAS services and, like ECC-less DDR4, should be reserved for consumer electronics for basically only tasks like entertainment. Actually, in a better world most consumer electronic should have real ECC (instead of none at all or implementation detail on-die) -- but sadly for now vendors do not do that.
All that said, there are still ECC (has an ECC memory) and no-ECC dimms for DDR5. So if the on-die ECC is concerning for anyone, they can still get a DIMM with a separate ECC memory. But the ECC happening at the interface between the DIMM and the CPU will still exist always and you will have to trust it.