Those headlines are correct, and were at the time this article was written as well. Intel's first 10nm process was completely broken, and their current less-dense 10nm process is still barely usable. Any density advantages Intel was planning on their 10nm having over TSMC 7nm are meaningless at this point. Higher density is pointless unless you can get yields that are good enough to ship chips that are meaningfully better on power, performance and price.
Please note that Dennard's scaling has long subsided, gate length reductions do not automatically comes with gains for every metric anymore, notably leakage current. Previous nodes are more power-efficient for some uses, like infrared remotes.
The criticism is that feature size isn't useful for chip designers to choose a fab anymore, so they should be ignoring it too nowadays. (The meta criticism is that they already know it, no need to point it out.)
In plain english, when someone conveys made up information for their gain, we call this lying
Unlike a sibling comment, I never knew that the lithography process did not correspond to any physical characteristic in the chip. I naively assumed that the headlines saying that Intel was behind in process technology were correct, and used that to inform purchasing decisions. I found the article enlightening, and I think many on HN with the same background as myself will agree.
As an aside, I tried to read the linked IEEE paper [1] but the page is cut off for me below section 2. If anyone has a link to the full PDF, I would appreciate that.
[1]: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=906...