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A comment on Google offers free fabbing for 130nm open-source chips. Parent comment
Theoretically it should be feasible to fab 350 nm without double-patterning by optimizing a simple immersion DLP/DMD i-line stepper.
I think ArF immersion with double-patterning should be able to do maskless 90 nm.
Theoretically it should be feasible to fab 350 nm without double-patterning by optimizing a simple immersion DLP/DMD i-line stepper.
I think ArF immersion with double-patterning should be able to do maskless 90 nm.