Re:New Metal-Air Transistor Replaces Semiconductors
by marcosdumay on Sunday December 02, 2018 @01:27PM
(#18583636)
> What does this mean for cooling, especially in the high-density 3D architectures mentioned?
Well, it's not even clear why they think it helps a 3D architecture. AFAIK, there is no mature layer deposition technique that allows gaps for the vacuum those transistors require, so I'd imagine it makes 3D harder.
For cooling, keep in mind that at those scales air cooling is much less efficient than conductive cooling.
> Does this mean that chips would have less resistive heating?
Complementary logic (the "C" in C-MOS) sets the heat dissipation into a fixed amount per clock cycle, whatever resistance you have. When you hear about "lower resistance transistors", you should hear "higher frequency transistors".
> is there is also a lattice-spacing constraint
There is also a lattice-spacing constraint. Manufacture constraints don't change (they used a well known, very expensive, and hard to scale technique for their proof of concept), insulation constraints don't go away, and they replaced the charge carrier orbital constraints with a constraint on the length of the electrode separation.
Well, it's not even clear why they think it helps a 3D architecture. AFAIK, there is no mature layer deposition technique that allows gaps for the vacuum those transistors require, so I'd imagine it makes 3D harder.
For cooling, keep in mind that at those scales air cooling is much less efficient than conductive cooling.
> Does this mean that chips would have less resistive heating?
Complementary logic (the "C" in C-MOS) sets the heat dissipation into a fixed amount per clock cycle, whatever resistance you have. When you hear about "lower resistance transistors", you should hear "higher frequency transistors".
> is there is also a lattice-spacing constraint
There is also a lattice-spacing constraint. Manufacture constraints don't change (they used a well known, very expensive, and hard to scale technique for their proof of concept), insulation constraints don't go away, and they replaced the charge carrier orbital constraints with a constraint on the length of the electrode separation.