Chipmakers Test Ferroelectrics as a Route to Ultralow-Power Chips

Re:Chipmakers Test Ferroelectrics as a Route to Ultralow-Pow... by slededit on Friday March 16, 2018 @01:21PM (#16602231)

DDR4 on chip frequencies are on the order of 200mhz internally. They get the high data rates by being massively parallel. So never discount the low clock frequencies.

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Re:Chipmakers Test Ferroelectrics as a Route to Ultralow-Pow... by deepnotderp on Friday March 16, 2018 @04:12PM (#16603677)

It's a moot point anyways since hafnia based ferroelectrics do not suffer from this speed issue. Also this is the transistor switching speed we're talking about, entirely different than DDR clock speeds.

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Re:Chipmakers Test Ferroelectrics as a Route to Ultralow-Pow... by slededit on Friday March 16, 2018 @06:52PM (#16604539)

Transistor speed is actually the problem on DRAM memories. The process for making great capacitors is terrible for making fast transistors.

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Re:Chipmakers Test Ferroelectrics as a Route to Ultralow-Pow... by deepnotderp on Friday March 16, 2018 @09:39PM (#16605159)

But DRAM processes use RCAT transistors.

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