Re:Chipmakers Test Ferroelectrics as a Route to Ultralow-Pow...
by deepnotderp on Friday March 16, 2018 @12:58PM
(#16602024)
So in NCFETs there is something called capacitance matching which is basically the value of the negative capacitor compared to the value of the positive capacitor.
When you have different values, then you can get NCFETs, and in different values, you get FRAM.
In FRAM you get states stored in the polarization of the atoms in the ferroelectric layer.
When you have different values, then you can get NCFETs, and in different values, you get FRAM.
In FRAM you get states stored in the polarization of the atoms in the ferroelectric layer.