Re:The Race to 10/7nm
by coldcode on Wednesday May 31, 2017 @01:50PM
(#14454480)
Once you get down to 7nm don't quantum effects become harder to deal with? Don't know much about chip design but I seem to remember as things get really small it gets harder to isolate components.
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Re:The Race to 10/7nm
by deepnotderp on Wednesday May 31, 2017 @05:02PM
(#14455891)
Yes, quantum tunneling is a real problem and has been an increasingly dangerous issue as the nodes shrink. Three interesting proposals to try and mitigate the issue are:
1. TFETs, aka Tunneling FETs, harness the leakage current itself to drive the transistor.
2. Quantum well FinFETs, use the quantum well to constrain the electron movement and circumvent the problem.
3. This is more of a stopgap measure, but the usage of SiGe FinFETs with FD-SOI.
Re:The Race to 10/7nm
by samfisher83 on Wednesday May 31, 2017 @03:03PM
(#14455040)
You already had quantum effects at 14,20,32nm etc.