Re:Nantero Exits Stealth: Using Carbon Nanotubes for Non-Vol...
by Symmetry on Friday June 12, 2015 @08:46AM
(#9705484)
I wouldn't be that concerned even if the endurance isn't any better than the lower bound. A large, fast DIMM today would have 8GB of storage and 25 GB/s of bandwidth. If you write to the whole thing at full speed that'll get you a millennium of writing. If you're only ever writing to the smallest bit that won't be masked by a 8MB L3 then you've still got a year of continuous writing even in the absolute worst case.
Re:Nantero Exits Stealth: Using Carbon Nanotubes for Non-Vol...
by morrad on Thursday June 11, 2015 @09:56PM
(#9703579)
> First, 10^11 P/E cycle and "practically infinite" aren't really two concepts I would associate with each other when discussing RAM.
I think their point of comparison for this statistic is NAND flash. 10^11 is much better than current NAND P/E cycles ( < 10^9 I believe).
Re:Nantero Exits Stealth: Using Carbon Nanotubes for Non-Vol...
by StephanTLavavej on Thursday June 11, 2015 @10:59PM
(#9703774)
It's roughly 3000 cycles. Yes, three thousand. See: http://www.anandtech.com/show/7237/samsungs-vnand-hitting-th...
The write/erase endurance is practically infinite as independent university study has shown Nantero’s NRAM technology to have over 10^11 P/E cycles,(for your information, 10^11 translates to 100 billion).
First, 10^11 P/E cycle and "practically infinite" aren't really two concepts I would associate with each other when discussing RAM.
And second, an Anandtech article explaining what 10^11 means? If I have trouble with that concept, about 98%+ of their articles would be completely over my head.