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A comment on Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm. Parent comment

Re:Samsung Demonstrates 3D Stacked FETs with Triple Nanoshee... by kridsdale1 on Tuesday June 23, 2026 @04:18PM (#48650748)
In NAND, data loss is proportional to temperature. I don’t recall how logic circuit errors behave.
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