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pfatehi

Re:Intel Reinvents Transistors Using New 3-D Structure on Saturday May 07, 2011 @06:28PM (#2524751)
"An alternative to the standard methods of building planar MOSFETs has been proposed to help alleviate some of the physical barriers to scaling down existing designs. These proposals involve the construction of three dimensional MOSFETs either in the form of a dual-gate transistor (FinFET) or as a tri-gate transistor as a replacement for the conventional planar MOSFET."
Re:Intel Reinvents Transistors Using New 3-D Structure on Saturday May 07, 2011 @06:13PM (#2524716)
here's another one:

"TRI-GATE DEVICE WITH CONFORMAL PVD WORKFUNCTION METAL ON ITS THREE-DIMENSIONAL BODY AND FABRICATION METHOD THEREOF"

http://www.freepatentsonline.com/y2008/0157207.html